Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays

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概要

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• Hafnium Carbide (HfC)-coated polycrystalline silicon (poly-Si) field emitter arrays (FEAs) were fabricated on an oxidized silicon wafer. The HfC coating layer was deposited by inductively coupled plasma-assisted magnetron sputtering. The effect of the HfC thickness on the emission characteristics was investigated by depositing 15-nm- and 30-nm-thick HfC on the tip. The thinner HfC could effectively improve the emission characteristics of poly-Si FEA, while the thicker one degrades the emission. Two methods of tip sharpening were also investigated: one is thermal oxidation sharpening which is commonly used for Si FEA fabrication, and the other is Ar ion sputtering. The apex radius of the thermally oxidized FEA was much smaller than that of the sputter-sharpened one. However, some irregularly shaped tips were found in the oxidized FEA, which are responsible for gate current. The detailed fabrication and emission characteristics, including gate current, will be reported.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• Sato Takanobu

  University Of Tsukuba Tennoudai Tsukuba

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology

• NAGAO Masayoshi

  National Institute of Advanced Industrial Science and Technology

• KANEMARU Seigo

  National Institute of Advanced Industrial Science and Technology

• SACHO Yutaka

  National Institute of Advanced Industrial Science and Technology

• ITOH Junji

  National Institute of Advanced Industrial Science and Technology

• Matsukawa Takashi

  National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Nagao Masayoshi

  National Institute of Advanced Industrial Science & Technology (AIST)

• Itoh Junji

  National Institute of Advanced Industrial Science & Technology (AIST)

• Itoh Junji

  National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Nagao Masayoshi

  National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Sato Takanobu

  University of Tsukuba, Tennoudai, Tsukuba, Ibaraki 305-8573, Japan

• Kanemaru Seigo

  National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Kanemaru Seigo

  National Institute of Advanced Industrial Science & Technology (AIST)

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