Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
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概要
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HfC-coated amorphous-Si field emitter arrays (FEAs) controlled by a built-in poly-Si thin-film transistor (TFT) was proposed and fabricated. Such FEAs were fabricated at relatively low temperatures by an Ar ion sputter sharpening so that a low-temperature poly-Si TFT process can be applied. We compared the comb-shaped gate structure and lightly doped drain (LDD)-structured TFT from the viewpoint of controlling field emission current. The LDD-structured TFT with a channel length of 50 μm and an LDD offset length of 2 μm withstands a high source drain voltage of more than 40 V. Successful control of FEAs by built-in TFT was demonstrated in a vacuum chamber. The fabrication and emission control characteristics of such a device will be reported in detail.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
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NAGAO Masayoshi
National Institute of Advanced Industrial Science and Technology
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KANEMARU Seigo
National Institute of Advanced Industrial Science and Technology
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SACHO Yutaka
National Institute of Advanced Industrial Science and Technology
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ITOH Junji
National Institute of Advanced Industrial Science and Technology
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Matsukawa Takashi
National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nagao Masayoshi
National Institute of Advanced Industrial Science & Technology (AIST)
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Itoh Junji
National Institute of Advanced Industrial Science & Technology (AIST)
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Nagao Masayoshi
National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Kanemaru Seigo
National Institute of Advanced Industrial Science & Technology (AIST)
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