Independent-Double-Gate FinFET SRAM Technology
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概要
- 論文の詳細を見る
Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible Vth adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.
著者
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology (AIST)
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OUCHI Shin-ichi
National Institute of Advanced Industrial Science and Technology (AIST)
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