Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

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We present an experimental study of effective carrier mobility ($ \mu _{\text{eff}}$) of multi-fin-type double-gate metal–oxide–semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent wet etching. The peak values of the obtained $ \mu _{\text{eff}}$ of electrons and holes are approximately 300 and 160 cm2/(V s), respectively, which are close to those in (111) bulk metal–oxide–semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field ($E_{\text{eff}}$) dependence of the $ \mu _{\text{eff}}$ of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of $ \mu _{\text{eff}}$ are very useful for the modeling and design of FinFET-complementary metal–oxide–semiconductor (CMOS) circuits and the developed wet etching technique is very attractive in the fabrication of ultrathin and high-quality Si-fin channels.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-30