InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
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概要
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A quasi-buried heterostructure (BH) quantum wire (QWR)-distributed feedback (DFB) laser was realized by one-time selective metalorganic chemical vapor deposition (MOCVD) on a ridge substrate with a submicron grating. One-time selective MOCVD led to the formation of a ridge waveguide with a BH structure and a QWR array for gain-guided DFB laser diode (LD) without additional etching or regrowth process. The threshold current is 15 mA, and the threshold current density is 850 A/cm2. A stable single longitudinal mode was preserved until 3 Ith, after which another mode emerged at a high drive current at 813.6 nm. This suggests a complex-coupled DFB-mode operation. The elimination of the regrowth step enlarges the range of material for extended wavelengths and operational temperatures.
- 2005-04-15
著者
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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OGURA Mutsuo
National Institute of Advanced Industrial Science and Technology
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YONEI Kenji
Shibaura Institute of Technology
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TAKASUKA Yasuyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Ogura Mutsuo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Takasuka Yasuyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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