Femtosecond Pump–Probe Spectroscopy of GaAs Crescent Quantum Wires
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概要
- 論文の詳細を見る
We have investigated the ultrafast carrier dynamics in high-optical-quality V-grooved GaAs/AlGaAs quantum wires using pump-probe spectroscopy. It is found that, with resonant excitation, a blue shift due to exciton–exciton interaction occurs within 0.3 ps followed by a redshift due to exciton relaxation. Under nonresonant excitation, the redshift occurs due to the phonon emission during exciton formation. As a result, the exciton formation time and the exciton lifetime in the quantum wires are found to be 5 and 110 ps, respectively. This exciton lifetime corresponds to the free-exciton lifetime close to the theoretical intrinsic lifetime of one-dimensional excitons and proves that our quantum wires have little interface disorder and have high optical quality.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-08-15
著者
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OGURA Mutsuo
National Institute of Advanced Industrial Science and Technology
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WATANABE Masanobu
National Institute of Advanced Industrial Science and Technology
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YASUHIRA Tetsutarou
CREST-Japan Science and Technology Corporation (JST)
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KOMORI Kazuhiro
CREST-Japan Science and Technology Corporation (JST)
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AKIMOTO Ryoichi
CREST-Japan Science and Technology Corporation (JST)
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Wang Xue-Lun
National Institute of Advanced Industrial Science and Technology
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Wang Xue-Lun
National Institute of Advanced Industrial Science and Technology Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Ogura Mutsuo
National Institute of Advanced Industrial Science and Technology Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Komori Kazuhiro
CREST-Japan Science and Technology Corporation (JST), 4-1-8 Kawaguchi, Saitama 332-0012, Japan
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Komori Kazuhiro
CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Watanabe Masanobu
National Institute of Advanced Industrial Science and Technology Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
関連論文
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- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
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- AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
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- Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
- 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
- InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
- Exciton Rabi Oscillation in Single Pair of InAs/GaAs Coupled Quantum Dots
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- Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
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- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Terahertz Wave Generation Device using Multi-Quantum Well with Transverse Electric Field
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