Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 2003-04-30
著者
-
Wang X‐l
Yale Univ. Connecticut
-
Wang Xue-lun
National Institute Of Advanced Industrial Science And Technology (aist)
-
OGURA Mutsuo
National Institute of Advanced Industrial Science and Technology
-
SUGAYA Takeyoshi
National Institute of Advanced Industrial Science and Technology
-
HAHN Cheol-Koo
National Institute of Advanced Industrial Science and Technology (AIST)
-
JANG Kee-Youn
National Institute of Advanced Industrial Science and Technology (AIST)
-
Ogura M
National Institute Of Advanced Industrial Science And Technology (aist)
関連論文
- Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Photoluminescence and Photoluminescence Excitation Spectra of Strained High-Density InGaAs/Al_xGa_As Quantum Wire Structures on Submicron Grating
- InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
- InGaAs/AlGaAs quantum wire distributed feedback buried hetero-structure laser diode by one time selective metalorganic chemical vapor deposition on ridge substrate
- AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
- Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
- Optical Characteristics of InAs/GaAs Double Quantum Dots Growth by MBE with the Indium-Flush Method
- Highest Density 1.3μm InAs Quantum Dots Covered with Gradient Composition InGaAs Strain Reduced Layer Grown with an As_2 Source Using Molecular Beam Epitaxy
- Highly Stacked and High-Quality Quantum Dots Fabricated by Intermittent Deposition of InGaAs
- Photon Statistics in a Thick Barrier Coupled Quantum Dot
- Observation of Bonding States in Single Pair of Coupled Quantum Dots Using Microspectroscopy
- Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots
- Carrier correlations in single pair of coupled quantum dots
- AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
- 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
- Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
- 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
- InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
- Observation of Bonding States in Single Pair of Coupled Quantum Dots Using Microspectroscopy
- Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots
- Optical Characteristics of InAs/GaAs Double Quantum Dots Grown by MBE with the Indium-Flush Method
- 1.3 μm Distributed Feedback Laser with Half-Etching Mesa and High-Density Quantum Dots
- Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
- Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
- Distributed Feedback Lasers Having Quantum-Wire Array as an Active Grating
- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Optical Characteristics of Self-Aligned InAs Quantum Dots in the Presence of GaAs Oval Strain
- 1.3-μm Quantum Dot Distributed Feedback Laser with Half-Etched Mesa Vertical Grating Fabricated by Cl
- Femtosecond Pump–Probe Spectroscopy of GaAs Crescent Quantum Wires
- Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer (Special Issue : Solid State Devices and Materials)
- 1.3-μm Quantum Dot Distributed Feedback Laser with Half-Etched Mesa Vertical Grating Fabricated by Cl₂ Dry Etching (Special Issue : Microprocesses and Nanotechnology)