Observation of Bonding States in Single Pair of Coupled Quantum Dots Using Microspectroscopy
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概要
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The electronic structures of InAs/GaAs single and coupled quantum dots have been studied using photoluminescence (PL) and photoluminescence excitation (PLE) spectra obtained by microspectroscopy. We observed two peaks located at the band-edge energy region of the PL spectrum of single quantum dots, which originated from exciton ground states and resonance states associated with one longitudinal optical (1LO) phonon. There was no peak in the energy area between the two peaks in the single quantum dot spectrum (This area is referred to as the zero-absorption region). However, in the case of coupled quantum dots, we found new peaks in the zero-absorption region in PL and PLE spectra that are due to coupled states of coupled dots. Moreover, we found that the energy difference between the bonding and anti-bonding states depends on dot size. These results can provide the first step towards realizing quantum logic gate devices using coupled quantum dots with scalability.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Komori Kazuhiro
National Institute Of Advanced Industrial Science And Technology (aist)
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MOROHASHI Isao
National Institute of Advanced Industrial Science and Technology
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SUGAYA Takeyoshi
National Institute of Advanced Industrial Science and Technology
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GOSHIMA Keishiro
National Institute of Advanced Industrial Science and Technology (AIST)
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YAMAUCHI Shohgo
National Institute of Advanced Industrial Science and Technology (AIST)
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SHIKANAI Amane
National Institute of Advanced Industrial Science and Technology (AIST)
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Sugaya Takeyoshi
National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Agency (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Yamauchi Shohgo
National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Agency (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Goshima Keishiro
National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Agency (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Shikanai Amane
National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Agency (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Morohashi Isao
National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Agency (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Komori Kazuhiro
National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Agency (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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