Pulse Area Control of Exciton Rabi Oscillation in InAs/GaAs Single Quantum Dot
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概要
- 論文の詳細を見る
We investigated the optical properties of an exciton and a charged exciton in an InAs/GaAs single quantum dot (QD) with truncated pyramidal shape by microspectroscopy, and clarified the difference of sub-band structure between the exciton and the charged exciton in the same single QD. We observed the exciton population of the excited states by monitoring the luminescence of the ground state exciton and succeeded in the experimental demonstration of Rabi oscillation of the exciton and the charged exciton. The transition dipole moments estimated from experimental results in a pure InAs QD are 32 and 40 D for the charged exciton and exciton, respectively, which were comparable to those in InGaAs QD.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Komori Kazuhiro
National Institute Of Advanced Industrial Science And Technology (aist)
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MOROHASHI Isao
National Institute of Advanced Industrial Science and Technology
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GOSHIMA Keishiro
National Institute of Advanced Industrial Science and Technology (AIST)
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YAMAUCHI Shohgo
National Institute of Advanced Industrial Science and Technology (AIST)
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SHIKANAI Amane
National Institute of Advanced Industrial Science and Technology (AIST)
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Sugaya Takayoshi
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Goshima Keishiro
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Shikanai Amane
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Morohashi Isao
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Komori Kazuhiro
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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