Highest Density 1.3μm InAs Quantum Dots Covered with Gradient Composition InGaAs Strain Reduced Layer Grown with an As_2 Source Using Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
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Komori Kazuhiro
National Institute Of Advanced Industrial Science And Technology (aist)
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SUGAYA Takeyoshi
National Institute of Advanced Industrial Science and Technology
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Amano Takeru
National Institute Of Advanced Industrial Science And Technology (aist)
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Sugaya Takeyoshi
National Institute Of Advanced Industrial Science And Technology (aist)
関連論文
- Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Ultrafast Coherent Control of Inhomogeneously Broadened System by an Area-Regulated Pulse Sequence
- Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
- Optical Characteristics of InAs/GaAs Double Quantum Dots Growth by MBE with the Indium-Flush Method
- Highest Density 1.3μm InAs Quantum Dots Covered with Gradient Composition InGaAs Strain Reduced Layer Grown with an As_2 Source Using Molecular Beam Epitaxy
- Terahertz Wave Generations from Multi-Quantum Well with Transverse Electric Field
- Highly Stacked and High-Quality Quantum Dots Fabricated by Intermittent Deposition of InGaAs
- Photon Statistics in a Thick Barrier Coupled Quantum Dot
- Observation of Bonding States in Single Pair of Coupled Quantum Dots Using Microspectroscopy
- Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots
- Carrier correlations in single pair of coupled quantum dots
- Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
- Observation of Bonding States in Single Pair of Coupled Quantum Dots Using Microspectroscopy
- Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots
- Optical Characteristics of InAs/GaAs Double Quantum Dots Grown by MBE with the Indium-Flush Method
- Pulse Area Control of Exciton Rabi Oscillation in InAs/GaAs Single Quantum Dot
- 1.3 μm Distributed Feedback Laser with Half-Etching Mesa and High-Density Quantum Dots
- Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
- Resonant Characteristics in a Two-Dimensional Photonic Crystal Ring Resonator with a Triangular Lattice of Air Holes
- Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Ultrafast Coherent Control of Inhomogeneously Broadened System by an Area-Regulated Pulse Sequence
- Terahertz Wave Generation Device using Multi-Quantum Well with Transverse Electric Field
- Optical Characteristics of Self-Aligned InAs Quantum Dots in the Presence of GaAs Oval Strain
- 1.3-μm Quantum Dot Distributed Feedback Laser with Half-Etched Mesa Vertical Grating Fabricated by Cl
- Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer (Special Issue : Solid State Devices and Materials)
- 1.3-μm Quantum Dot Distributed Feedback Laser with Half-Etched Mesa Vertical Grating Fabricated by Cl₂ Dry Etching (Special Issue : Microprocesses and Nanotechnology)