Highly Stacked and High-Quality Quantum Dots Fabricated by Intermittent Deposition of InGaAs
スポンサーリンク
概要
- 論文の詳細を見る
We report the successful fabrication of a highly stacked and well-aligned InGaAs quantum dot (QD) structure of over 50 layers without using a strain compensation technique by the intermittent deposition of InGaAs layers and an As2 source, resulting in no degradation in crystal quality. Intermittent deposition of InGaAs layers at relatively high temperature accounts for the formation of InGaAs QDs despite their small lattice mismatch with GaAs. The photoluminescence measurements indicate that the 50-stack InGaAs QD structures have high crystal quality, whereas the crystal quality of multistacked InAs QDs becomes much worse even with four-stack structures.
- 2010-03-25
著者
-
SUGAYA Takeyoshi
National Institute of Advanced Industrial Science and Technology
-
Amano Takeru
National Institute Of Advanced Industrial Science And Technology (aist)
-
Takeyoshi Sugaya
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Mori Masahiko
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Shigeru Niki
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Takeru Amano
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Michio Kondo
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
MORI Masahiko
National Institute of Advanced Industrial Science and Technology
-
Masahiko Mori
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
- Optical Characteristics of InAs/GaAs Double Quantum Dots Growth by MBE with the Indium-Flush Method
- Highest Density 1.3μm InAs Quantum Dots Covered with Gradient Composition InGaAs Strain Reduced Layer Grown with an As_2 Source Using Molecular Beam Epitaxy
- Highly Stacked and High-Quality Quantum Dots Fabricated by Intermittent Deposition of InGaAs
- Photon Statistics in a Thick Barrier Coupled Quantum Dot
- Observation of Bonding States in Single Pair of Coupled Quantum Dots Using Microspectroscopy
- Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots
- Carrier correlations in single pair of coupled quantum dots
- Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
- Basic Study of Coupling on Three-Dimensional Crossing of Si Photonic Wire Waveguide for Optical Interconnection on Inter or Inner Chip
- Transmission Characteristics of Hydrogenated Microcrystalline Silicon Wire Waveguide at a Wavelength of 1.55 μm
- Transmission Characteristics of Hydrogenated Microcrystalline Silicon Wire Waveguide at a Wavelength of 1.55μm
- Phase error compensation for multilayered AWG in LCOS-based WSS
- Observation of Bonding States in Single Pair of Coupled Quantum Dots Using Microspectroscopy
- Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots
- Optical Characteristics of InAs/GaAs Double Quantum Dots Grown by MBE with the Indium-Flush Method
- 1.3 μm Distributed Feedback Laser with Half-Etching Mesa and High-Density Quantum Dots
- Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Optical Characteristics of Self-Aligned InAs Quantum Dots in the Presence of GaAs Oval Strain
- 1.3-μm Quantum Dot Distributed Feedback Laser with Half-Etched Mesa Vertical Grating Fabricated by Cl
- MEMS mirror with slot structures suitable for flexible-grid WSS
- Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer (Special Issue : Solid State Devices and Materials)
- 1.3-μm Quantum Dot Distributed Feedback Laser with Half-Etched Mesa Vertical Grating Fabricated by Cl₂ Dry Etching (Special Issue : Microprocesses and Nanotechnology)