Optical Characteristics of InAs/GaAs Double Quantum Dots Grown by MBE with the Indium-Flush Method
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概要
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We fabricated InAs/GaAs double quantum dot (QD) structures by molecular beam epitaxy (MBE) with the Indium-Flush method, where the energy separation between the electron levels of two QDs was less than the longitudinal optical (LO) phonon energy with a different barrier thickness. We confirm the peak energy shift between the double QDs in the photoluminescence (PL) spectra and assign this shift to the wave function coupling effect between the double dots. We also measured the time resolved PL spectra and observed the carrier transfer from smaller QDs to larger ones in the time domain. By estimating the tunneling time between double QDs, we obtain a tunneling time that is longer than the exciton decay time in single QD. Additionally, we mention the fade-out of the electron LO phonon interaction with the electron wave function coupling between double QDs based on the result of photoluminescence excitation measurements. These results suggest that our structures are attractive for quantum information processing.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Komori Kazuhiro
National Institute Of Advanced Industrial Science And Technology (aist)
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SUGAYA Takeyoshi
National Institute of Advanced Industrial Science and Technology
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GOSHIMA Keishiro
National Institute of Advanced Industrial Science and Technology (AIST)
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YAMAUCHI Shohgo
National Institute of Advanced Industrial Science and Technology (AIST)
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Sugaya Takeyoshi
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Yamauchi Shohgo
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Goshima Keishiro
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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Komori Kazuhiro
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba 305-0032, Japan
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