Optical Characteristics of Self-Aligned InAs Quantum Dots in the Presence of GaAs Oval Strain
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概要
- 論文の詳細を見る
We investigated the optical properties of the self-aligned InAs quantum dots (QDs) in the presence of GaAs crystal strain. We observed the orderly self-alignment of the InAs QDs in the presence of the oval strain of GaAs crystal and GaAs oval defects. The obtained micro photoluminescence ($\mu$-PL) and photoluminescence excitation ($\mu$-PLE) spectra show extremely sharp PL peaks, which are attributed to the QDs, and the sufficiently high crystalline quality of the self-aligned QDs for preserving carrier–phonon interaction. These observations suggest that the QDs grown in the presence of the crystal strain have a high quality, similar to conventionally grown QDs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Komori Kazuhiro
National Institute Of Advanced Industrial Science And Technology (aist)
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SUGAYA Takeyoshi
National Institute of Advanced Industrial Science and Technology
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YAMAUCHI Shohgo
National Institute of Advanced Industrial Science and Technology (AIST)
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Sugaya Takeyoshi
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Yamauchi Shohgo
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Komori Kazuhiro
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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