830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

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概要

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• We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

• 2007-02-25

著者

• SHIMOMURA Satoshi

  Graduate School of Engineering Science, Osaka University

• OGURA Mutsuo

  National Institute of Advanced Industrial Science and Technology

• Higuchi Yu

  Graduate School Of Engineering Science Osaka University

• KITADA Takahiro

  Institute of Technology and Science, University of Tokushima

• HIYAMIZU Satoshi

  Nara National College of Technology

• Osaki Shinji

  Graduate School Of Engineering Science Osaka University

• Sasahata Yoshifumi

  Graduate School Of Engineering Science Osaka University

• Sasahata Yoshifumi

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Osaki Shinji

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Shimomura Satoshi

  Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577, Japan

• Higuchi Yu

  Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Ogura Mutsuo

  National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

• Hiyamizu Satoshi

  Nara National College of Technology, Yamatokoriyama, Nara 639-1080, Japan

関連論文

• Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
• Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
• Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
• Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
• Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
• Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
• Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
• Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
• DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
• Photoluminescence and Photoluminescence Excitation Spectra of Strained High-Density InGaAs/Al_xGa_As Quantum Wire Structures on Submicron Grating
• InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
• InGaAs/AlGaAs quantum wire distributed feedback buried hetero-structure laser diode by one time selective metalorganic chemical vapor deposition on ridge substrate
• AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
• Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
• AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
• Micro-Pump--Probe Spectroscopy of an Exciton in a Single Semiconductor Quantum Dot Using a Heterodyne Technique
• High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy
• Super-Flat Interfaces in Pseudomorphic In_xGa_As/Al_Ga_As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
• 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
• Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)
• Electron Transport Properties in a GaAs/AlGaAs Quantum Wire Grown on V-Grooved GaAs Substrate by Metalorganic Vapor Phase Epitaxy
• 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
• InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
• Coherent Control of Exciton in a Single Quantum Dot Using High-Resolution Michelson Interferometer
• Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
• Distributed Feedback Lasers Having Quantum-Wire Array as an Active Grating
• Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
• Femtosecond Pump–Probe Spectroscopy of GaAs Crescent Quantum Wires

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