DC and RF Performance of 50 nm Gate Pseudomorphic In_<0.7>Ga_<0.3>As/In_<0.52>Al_<0.48>As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-07-15

著者

• Endoh Akira

  National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn

• MATSUI Toshiaki

  Communication Research Laborator

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Endoh A

  Fujitsu Lab. Ltd. Atsugi Jpn

• HIGASHIWAKI Masataka

  Graduate School of Engineering Science, Osaka University

• SHIMOMURA Satoshi

  Graduate School of Engineering Science, Osaka University

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• Hikosaka K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• KITADA Takahiro

  Osaka University

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• KITADA Takahiro

  Graduate School of Engineering Science, Osaka University

• AOKI Toyohiro

  Graduate School of Engineering Science, Osaka University

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• Aoki Toyohiro

  Graduate School Of Engineering Science Osaka University

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

• Higashiwaki M

  National Institute Of Information And Communications Technology

• Kitada Tadayoshi

  Institute Of Technology And Science University Of Tokushima

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

関連論文

• Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
• High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
• The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• Josephson Current in Microbridges of YBa_2Cu_3O_ Thin Films Prepared by CVD
• Bridge Type Josephson Junctions in MO-CVD Thin Films
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
• Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
• Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
• Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
• Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
• Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
• Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
• Monte Carlo simulations of electron transport in In0.52Al0.48As/In0.75Ga0.25As high electron mobility transistors at 300 and 16K
• Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
• High Performance AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators (Special Issue: Solid State Devices & Materials)
• AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
• Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
• High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
• DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
• Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
• Millimeter Wave Antennas with Gaussian Radiation Patterns(Special Issue on Innovation in Antennas and Propagation for Expanding Radio Systems)
• Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
• Low-Power, High-Speed Integrated Logic with GaAs MOSFET : B-1: GaAs IC
• High Electron Mobility Transistor Logic
• Selective Dry Etching of AlGaAs-GaAs Heterojunction
• Enhancement-Mode High Electron Mobility Transistors for Logic Applications
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
• Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
• A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
• Hyperon Nonleptonic Decays Revisited
• Broadband Double-Layered Coplanar Patch Antennas for Microwave/Millimeter-Wave Wireless Communications (特集:超音速デバイスおよびミリ波デバイスとその回路技術)
• Preparation of Superconductive Bi-Sr-Ca-Cu-O Thick Films by Rapid Quenching : Electrical Properties of Condensed Matter
• Preparation of Superconductive YBa_2Cu_3O_ Thick Films by the Rapid-Quenching Technique
• 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
• The Mass Levels of Q^2 ^2 States in (3+1) Dimensional Lattice Gauge Theory
• Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
• Coherency Dependence of Projection Printing Method Using a Phase-Shifting Mask
• Micro-Pump--Probe Spectroscopy of an Exciton in a Single Semiconductor Quantum Dot Using a Heterodyne Technique
• E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
• Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
• Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
• FDTD Analysis and Experiment of Fabry-Perot Cavities at 60GHz (Special Issue on Microwave and Millimeter Wave Technology)
• High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
• High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy
• Super-Flat Interfaces in Pseudomorphic In_xGa_As/Al_Ga_As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
• 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
• Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)
• Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy
• High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing System
• High-Sensitivity and High-Resolution Contact Hole Patterning by Enhanced-Wettability Developer
• Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
• AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
• Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
• 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
• Dielectric Measurements in the 60-GHz Band Using a High-Q Gaussian Beam Open Resonator
• FEM Analysis for Nonuniform Yielding Processes in Mild Steel Plates under Stretching
• Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
• HEMT : Looking Back at Its Successful Commercialization(Heterostructure Microelectronics with TWHM2003)
• Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations
• A Simple Cylindrical Retarding Field Energy Analyzer
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
• Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
• Improved Electron Mobility of Two-Dimensional Electron Gas Formed Area-Selectively in GaAs/AlGaAs Heterostructure by Focused Si Ion Beam Implantation and MBE Overgrowth
• High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
• Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements
• Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
• InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
• Development of High Electron Mobility Transistor
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

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