Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

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概要

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• The Si surface of n-SiC is etched by an Ar electron cyclotron resonance plasma in order to smooth the as-received substrates. Low-frequency current noise characteristics of Ohmic contacts of the wide-band-gap semiconductor n-SiC are investigated. Ohmic contacts with a diameter of 200 $\mu$m have a minimum Ohmic contact resistance of the order of $10^{-4}\,\Omega{\cdot}\text{cm}^2$ at an alloying temperature of $1000^{\circ}$C for 30 min. These low resistance Ohmic contacts show typical $1/f$ current noise characteristics that increase with the square of the sample current $I^2$. A sample with a higher contact resistance exhibits, however, current noise power increase with increasing sample current $I$. The relevant total electron number between the electrodes of the bulk substrate is estimated from the resistance and by finite element method simulation, from which the Hooge parameter $\alpha_{\text{H}}$ is estimated to be approximately 40.

• 2001-06-15

著者

• Tanuma Nobuhisa

  Meisei University

• YOKOKURA Saburo

  Meisei University

• HASHIGUCHI Sumihisa

  Yamanashi University

• MATSUI Toshiaki

  Communication Research Laborator

• TACANO Munecazu

  Meisei University

• Sikula Josef

  Technical University Of Brno

• YASUKAWA Satoshi

  Meisei University

• Matsui Toshiaki

  Communication Research Laboratory, Koganei, Tokyo 187-8795, Japan

• Tacano Munecazu

  Meisei University, Hino, Tokyo 191-8506, Japan

• Sikula Josef

  Technical University of Brno, Zizkova 17 60200 Brno, Czech Republic

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