Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors : Lateral Electron Density Distribution and Active Trap Position

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• TACANO Munecazu

  Meisei University

• Sedlakova Vlasta

  The Brno University of Technology, Brno 616 00, Czech Republic

• Sikula Josef

  The Brno University of Technology, Brno 616 00, Czech Republic

• Chvatal Milos

  The Brno University of Technology, Brno 616 00, Czech Republic

• Pavelka Jan

  The Brno University of Technology, Brno 616 00, Czech Republic

• Toita Masato

  Asahi Kasei Microsystems, Nobeoka, Miyazaki 882-003, Japan

関連論文

• Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
• Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors : Lateral Electron Density Distribution and Active Trap Position
• Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements

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