Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements

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概要

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• Ohmic contacts are formed on the epitaxial n-GaN film by the electron beam evaporation of Ti/Al and their rapid thermal alloying with device separation by a fairly fast Electron Cyclotron Resonance (ECR) plasma etching. The etched surface has a poor ohmic contact with a typical contact resistance of $8.1\times 10^{-3}$ $\Omega$$\cdot$cm2, while the as-received and rinsed surface has a better contact with a lower contact resistance of $7.5\times 10^{-6}$ $\Omega$$\cdot$cm2. The resistivity of the film is determined as a function of the temperature, in good agreement with the numerical analyses. The ohmic characteristics are evaluated by the $1/f$ noise measurements. Low ohmic contacts give the typical $1/f$ noise characteristics which increase with the square of the sample current $I$, while higher ohmic contacts give a linear noise power dependence on the sample current $I$. We are able to evaluate, therefore, the ohmicity of the electrodes most sensitively from the $1/f$ noise measurements. Assuming the relevant total electron number between the electrodes, the Hooge parameter is estimated as $\alpha_{\text{H}}=5.3\times 10^{-6}$ at room temperature, in qualitative agreement with the cross correlational $1/f$ noise model.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• Tanuma Nobuhisa

  Meisei University

• TANIZAKI Hirokazu

  Meisei University

• YOKOKURA Saburo

  Meisei University

• HASHIGUCHI Sumihisa

  Yamanashi University

• SIKULA Josef

  Brno University of Technology

• MATSUI Toshiaki

  Communication Research Laborator

• TACANO Munecazu

  Meisei University

• Tanuma Nobuhisa

  Meisei University, Hino, Tokyo 191-8506, Japan

• Sikula Josef

  Brno University of Technology, Techuicka 8, 61600 Brno, Czech Republic

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