MATSUI Toshiaki | Communication Research Laborator

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概要

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著作論文

Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements
Josephson Current in Microbridges of YBa_2Cu_3O_ Thin Films Prepared by CVD
Bridge Type Josephson Junctions in MO-CVD Thin Films
Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
Millimeter Wave Antennas with Gaussian Radiation Patterns(Special Issue on Innovation in Antennas and Propagation for Expanding Radio Systems)
Broadband Double-Layered Coplanar Patch Antennas for Microwave/Millimeter-Wave Wireless Communications (特集:超音速デバイスおよびミリ波デバイスとその回路技術)
FDTD Analysis and Experiment of Fabry-Perot Cavities at 60GHz (Special Issue on Microwave and Millimeter Wave Technology)
High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
Dielectric Measurements in the 60-GHz Band Using a High-Q Gaussian Beam Open Resonator
Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements
InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

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