Mimura Takashi | National Institute Of Information And Communications Technology (nict)
スポンサーリンク
概要
関連著者
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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MIMURA Takashi
Fujitsu Laboratories Lid.
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Hikosaka K
Fujitsu Lab. Ltd. Kanagawa Jpn
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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Hiyamizu S
Osaka Univ. Osaka Jpn
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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MATSUI Toshiaki
Communication Research Laborator
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ENDOH Akira
Fujitsu Laboratories Ltd.
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Higashiwaki M
National Institute Of Information And Communications Technology
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Hiyamizu Satoshi
Graduate School Of Engineering Science Osaka University
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MIMURA Takashi
National Institute of Information and Communications Technology
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Mimura T
National Institute Of Information And Communications Technology
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Watanabe Issei
National Institute Of Information And Communications Technology (nict)
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Hirose Nobumitsu
National Inst. Of Information And Communications Technology
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Coquet Philippe
Equipe Antennes Et Technologies
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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Shinohara K
National Institute Of Info. & Com. Tech.
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HIGASHIWAKI Masataka
Graduate School of Engineering Science, Osaka University
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Hiyamizu Satoshi
Fujitsu Limited
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Shimomura S
Graduate School Of Science And Engineering Ehime University
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Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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WATANABE Issei
National Institute of Info. & Com. Tech.
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KITADA Takahiro
Osaka University
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HIROSE Nobumitsu
National Institute of Information and Communications Technology
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SHINOHARA Keisuke
Communications Research Laboratory
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JOSHIN Kazukiyo
Fujitsu Laboratories Ltd.
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Hirose Nobumitu
Company "antennes Process
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SAULEAU Ronan
Laboratoire ART
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Kitada Tadayoshi
Institute Of Technology And Science University Of Tokushima
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Daniel Jean-pierre
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Coquet Philippe
Ecole Normale Superieure De Cachan Antenne De Bretagne
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Suda Yoshiyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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SHIMOMURA Satoshi
Graduate School of Engineering Science, Osaka University
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SHINOHARA Keisuke
National Institute of Info. & Com. Tech.
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SHIMOMURA Satoshi
Osaka University
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HIYAMIZU Satoshi
Osaka University
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HIGASHIWAKI Masataka
Communications Research Laboratory
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SHINOHARA Keisuke
Graduate School of Engineering Science, Osaka University
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YAMASHITA Yoshimi
Communications Research Laboratory
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ENDOH Akira
Communications Research Laboratory
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HIKOSAKA Kohki
Communications Research Laboratory
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MATSUI Toshiaki
Graduate School of Engineering Science, Osaka University
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MIMURA Takashi
Communications Research Laboratory
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HIGASHIWAKI Masataka
the Graduate School of Engineering Science, Osaka University
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HIYAMIZU Satoshi
the Graduate School of Engineering Science, Osaka University
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KITADA Takahiro
Graduate School of Engineering Science, Osaka University
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AOKI Toyohiro
Graduate School of Engineering Science, Osaka University
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Abe Masayuki
Fujitsu Laboratories Ltd.
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Abe Masayuki
Fujitsu Laboratories Limited
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Aoki Toyohiro
Graduate School Of Engineering Science Osaka University
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Hanafusa Hiroaki
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
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SHINOHARA Keisuke
Ecole Normale Superieure de Cachan, Antenne de Bretagne
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DANIEL Jean-Pierre
Communications Research Laboratory, Ministry of Posts and Telecommunications
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COQUET Philippe
Ecole Normale Superieure de Cachan, Antenne de Bretagne
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THOUROUDE Daniel
Laboratoire Antennes et Reseaux, UPRES A CNRS 6075 Universite de Rennes
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DANIEL Jean-Pierre
Laboratoire Antennes et Reseaux, UPRES A CNRS 6075 Universite de Rennes
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YUZAWA Harunobu
Communication Research Laboratory, Ministry of Posts and Telecommunication
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HIROSE Nobumitsu
Communication Research Laboratory, Ministry of Posts and Telecommunication
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KASAMATSU Akifumi
National Inst. of Information and Communications Technology
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Coquet Philippe
Communications Research Laboratory-MPT
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Kiyokawa Masahiro
Communications Research Laboratory-MPT
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Shinohara Keisuke
Ecole Normale Superieure De Cachan Antenne De Bretagne
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Thouroude Daniel
Laboratoire Antennes Et Reseaux Upres A Cnrs 6075 Universite De Rennes
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Thouroude Daniel
Laboratoire Antennes
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Yuzawa Harunobu
Communication Research Laboratory Ministry Of Posts And Telecommunication
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Daniel Jean-pierre
Company "antennes Process
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Hirose Nobumitu
Communications Research Laboratory Ministry Of Posts And Telecommunications
著作論文
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
- DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
- Millimeter Wave Antennas with Gaussian Radiation Patterns(Special Issue on Innovation in Antennas and Propagation for Expanding Radio Systems)
- High Electron Mobility Transistor Logic
- Selective Dry Etching of AlGaAs-GaAs Heterojunction
- E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
- FDTD Analysis and Experiment of Fabry-Perot Cavities at 60GHz (Special Issue on Microwave and Millimeter Wave Technology)
- Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
- AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
- Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
- 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
- Dielectric Measurements in the 60-GHz Band Using a High-Q Gaussian Beam Open Resonator
- Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations