HIGASHIWAKI Masataka | National Institute of Information and Communications Technology

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概要

• Higashiwaki Masatakaの詳細を見る
• 同名の論文著者
• National Institute of Information and Communications Technologyの論文著者

関連著者

• HIGASHIWAKI Masataka

  National Institute of Information and Communications Technology

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• MIMURA Takashi

  National Institute of Information and Communications Technology

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Higashiwaki M

  National Institute Of Information And Communications Technology

• Matsui Toshiaki

  National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan

• Higashiwaki Masataka

  National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

• Mimura T

  National Institute Of Information And Communications Technology

• Yamakoshi Shigenobu

  Tamura Co. Ltd.

• Masui Takekazu

  Koha Co. Ltd.

• Sasaki Kohei

  Tamura Co. Ltd.

• Kuramata Akito

  Tamura Co. Ltd.

• Higashiwaki Masataka

  National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan

• Yamakoshi Shigenobu

  Tamura Corporation, Sayama, Saitama 350-1328, Japan

• Higashiwaki Masataka

  National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan

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著作論文

• Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
• AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
• 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
• InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
• Si-Ion Implantation Doping in \beta-Ga
• High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
• Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"
• AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
• Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

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