Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"
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概要
- 論文の詳細を見る
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-06-25
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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Higashiwaki Masataka
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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