Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy

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概要

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• Strained Si on our previously proposed strain-relief relaxed thin quadruple-Si1-xGex-layer buffer was formed by sputter epitaxy, the buffer relaxation mechanism and controllability of which were basically the same as those of gas-source molecular beam epitaxy (GS-MBE); the strained-Si crystallinity obtained by sputter epitaxy was largely comparable to that obtained by GS-MBE. By using sputter epitaxy, a flatter strained Si surface that exhibits almost no cross-hatch undulation morphology is obtained. The strain rate of the topmost 60-nm-thick strained Si layer grown on the quadruple-Si1-xGex-layer buffer with a total thickness of 240 nm and a top Ge content of 0.35 was 0.84% in the lateral direction. The results suggest that our environmentally light-load sputter epitaxy method can be applied to the fabrication of high-density Si/Si1-xGex strained devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• Hirose Nobumitsu

  National Inst. Of Information And Communications Technology

• Hanafusa Hiroaki

  Graduate School Of Engineering Tokyo University Of Agriculture And Technology

• Suda Yoshiyuki

  Graduate School Of Engineering Hokkaido University

• KASAMATSU Akifumi

  National Inst. of Information and Communications Technology

• MIMURA Takashi

  National Institute of Information and Communications Technology

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