High-PVCR Si/Si_<1-x>Ge_x Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Sano Yoshihiro
Graduate School Of Agriculture Hokkaido University
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Sano Yoshihiro
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
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Maekawa Hirotaka
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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