Evaluation of Ion and Radical Fluxes in CH_4/H_2 Plasma for CNT Growth
スポンサーリンク
概要
- 論文の詳細を見る
A CH4/H2 radio frequency capacitively coupled plasma used for synthesis of carbon nanotubes (CNTs) was simulated with a 1-dimensional fluid model. The pressure of CH4 was fixed at 1 Torr and that of H2 varied from 0 to 9 Torr. When the H2 mixture ratio was 0.1, the fluxes of H2+ and H3+ to the substrate were respectively about 5 and 10 times those for the case without H2 mixing. In our previous experiment, a slight mixture of H2 promoted CNT growth. We inferred that this was because H2 maintained the activity of the catalyst particle from which CNT grew. The present numerical result supports our hypothesis. In addition, CxHy (x, y ≥ 2) accumulated with time. This accumulation is not negligible because it lowers the electron temperature. We estimated the H2 ionization rate in CH4/CxHy is about 2/3 of that in CH4. It is pointed out that we need to consider the accumulation of CxHy to improve the accuracy of the estimation of CNT growth.
- 社団法人 電気学会の論文
- 2008-10-01
著者
-
Suda Yoshiyuki
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
-
Oda Akinori
Graduate School Of Engineering Nagoya Institute Of Technology
-
Sakai Yosuke
Graduate School Of Engineering Hokkaido University
-
Sugawara Hirotake
Graduate School Of Engineering Hokkaido University
-
HIZUME Youhei
Graduate School of Information Science and Technology, Hokkaido University
-
OKITA Atsushi
Graduate School of Information Science and Technology, Hokkaido University
-
Hizume Youhei
Graduate School Of Information Science And Technology Hokkaido University
-
Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
関連論文
- Carbon-Nanotube Growth in Alcohol-Vapor Plasma
- Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
- Evaluation of Ion and Radical Fluxes in CH_4/H_2 Plasma for CNT Growth
- Timesaving techniques for decision of electron–molecule collisions in Monte Carlo simulation of electrical discharges
- Analysis of Oxidation State of Multilayered Catalyst Thin Films for Carbon Nanotube Growth Using Plasma-Enhanced Chemical Vapor Deposition
- Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas
- Two-peaked velocity distribution function of electrons in carbon tetrafluoride in crossed electric and magnetic fields
- 1D fluid modeling of Xe/Ar/Ne filled PDP
- The drift velocity vector of electron swarms in crossed electric and magnetic fields
- Ozone Production Efficiency of Atmospheric Dielectric Barrier Discharge of Oxygen Using Time-Modulated Power Supply
- Fluorinated Carbon Films with Low Dielectric Constant Made from Novel Fluorocarbon Source Materials by RF Plasma Enhanced Chemical Vapor Deposition
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering
- Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
- Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering
- Relaxation Behavior of Sputter Epitaxy Si_Ge_x Film on P-Type Si(001) and NDR Observation from Hole-Tunneling RTD at RT
- SiO_x/β-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of β-SiC
- Room Temperature Oscillation in Si/Si_Ge_x Resonant Tunneling Diode
- SiOx/3C-SiC/Si Metal--Insulator--Semiconductor Nonvolatile Resistance Memory
- Numerical simulation of electron transport in electric and magnetic fields for analysis of electron temperature and number density profiles measured in an argon magnetic neutral loop discharge plasma
- Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers
- High-PVCR Si/Si_Ge_x Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer
- Analysis of Oxidation State of Multilayered Catalyst Thin Films for Carbon Nanotube Growth Using Plasma-Enhanced Chemical Vapor Deposition
- Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics
- Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
- Al2O3/3C-SiC/n-Si Nonvolatile Resistance Memory
- Ozone Production Efficiency of Atmospheric Dielectric Barrier Discharge of Oxygen Using Time-Modulated Power Supply
- Scattering-Based Stochastic Process Attracting Electrons Inward under Antiparallel Gradient Magnetic Fields
- Hydrogen-Sensing Response of Carbon-Nanotube Thin-Film Sensor with Pd Comb-Like Electrodes
- Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
- Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers