Al2O3/3C-SiC/n-Si Nonvolatile Resistance Memory
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概要
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We propose a new nonvolatile resistance memory device having a metal/Al2O3/3C-SiC/n-Si/metal metal--insulator--semiconductor (MIS) structure. The on/off behavior of the resistance change memory is suggested to be explained by electron trapping and detrapping through the Al2O3 layer in the defect states generated in the Al2O3/3C-SiC interface region of the 3C-SiC layer. Compared to our previously reported metal/SiOx/3C-SiC/n-Si/metal MIS memory device, where electron trapping and detrapping are caused through the 3C-SiC layer, the device exhibits higher switching endurance characteristics.
- 2012-10-25
著者
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Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
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Yamaguchi Nobuo
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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