Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the relaxation process of strain-relieving double- and triple-SiGe-layer buffers. The top SiGe layer relaxes the buffer and prevents threading dislocations from being propagated to the surface. The thickness of the top layer that relaxes the buffer is thinner than expected from the average Ge composition criterion on the basis of our experimentally obtained critical thicknesses. With the triple-SiGe-layer buffer formed by the insertion of very thin and high-Ge-composition Si/Si1-xGex layers between the double SiGe layer and Si(001), the relaxation increases without increasing the surface dislocation density.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-12-25
著者
-
Sano Yoshihiro
Graduate School Of Agriculture Hokkaido University
-
Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
-
Maekawa Hirotaka
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
-
Meguro Akihiko
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
-
Sano Yoshihiro
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
関連論文
- Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
- Evaluation of Ion and Radical Fluxes in CH_4/H_2 Plasma for CNT Growth
- Preparation of activated carbon fibers with large specific surface area from softwood acetic acid lignin
- Preparation of activated carbon moldings from the mixture of waste newspaper and isolated lignins : mechanical strength of thin sheet and adsorption property
- Activated carbon sheet prepared from softwood acetic acid lignin
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Preparation of amphiphilic lignin derivative as a cellulase stabilizer
- Improvement of Moisture Sorption of Polyurethane Fiber by Blending Cellulose
- Preparation and Characterization of Alginate-blended Rayon
- Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
- Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering
- Relaxation Behavior of Sputter Epitaxy Si_Ge_x Film on P-Type Si(001) and NDR Observation from Hole-Tunneling RTD at RT
- SiO_x/β-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of β-SiC
- Room Temperature Oscillation in Si/Si_Ge_x Resonant Tunneling Diode
- SiOx/3C-SiC/Si Metal--Insulator--Semiconductor Nonvolatile Resistance Memory
- Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers
- High-PVCR Si/Si_Ge_x Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer
- Strain-Relief Mechanisms of Stepwise Ge composition Multilayer Buffers and High PVCR Si/Si_Ge_x ASDQW RTD Formed with Triple-Layer Buffer
- Analysis of Oxidation State of Multilayered Catalyst Thin Films for Carbon Nanotube Growth Using Plasma-Enhanced Chemical Vapor Deposition
- Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics
- Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
- Al2O3/3C-SiC/n-Si Nonvolatile Resistance Memory
- Hydrogen-Sensing Response of Carbon-Nanotube Thin-Film Sensor with Pd Comb-Like Electrodes
- Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
- Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers