Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering

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Tungsten carbide (WC1-x) thin films were deposited by simultaneous sputtering. Tungsten and carbon solid materials were simultaneously sputtered by argon ion bombardment and deposited on substrates. Argon plasma was triggered using an RF (13.56 MHz) power source. The aim of this study is to apply this sputtering technique in a plasma-based ion implantation and deposition (PBII&D) system for the surface modification of three-dimensional workpieces. The films’ surfaces in both the presence and absence of tungsten were very smooth, and only a few metal droplets were seen. An in-depth X-ray photoelectron spectroscopy profile revealed the following: (1) the films deposited contain approximately 30% tungsten in the most-to-least film; (2) carbon atoms bonded to tungsten (C–W) as well as those bonded to carbon (C–C) are detected in the C $1s$ spectra; (3) the stoichiometry of the film for an argon ion sputter time between ${\sim}400$ and ${\sim}1600$ s is deduced as WC0.73± 0.10. The Raman spectra and Tauc plot from the optical transparency showed that the films contain approximately 10% sp3 with a band gap of 1.1 eV.
2006-10-30