SiOx/3C-SiC/Si Metal--Insulator--Semiconductor Nonvolatile Resistance Memory
スポンサーリンク
概要
- 論文の詳細を見る
We propose a new nonvolatile resistance memory device having a metal/SiOx/3C-SiC/Si/metal metal--insulator--semiconductor (MIS) structure with a thin electron-tunneling oxide layer. The electronic hysteresis behavior is explained with donor-like states created probably near the oxide/3C-SiC interface region in the 3C-SiC oxidation process. The on and off resistance switch relates to injection/ejection of electrons into/from the states. We have also succeeded in operating the memory function dynamically.
- Japan Society of Applied Physicsの論文
- 2008-07-25
著者
-
Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
-
SHOUJI Masatsugu
Graduate School of Engineering, Tokyo University of Agriculture and Technology
-
Takada Kazuyoshi
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
-
Shouji Masatsugu
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
関連論文
- Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
- Evaluation of Ion and Radical Fluxes in CH_4/H_2 Plasma for CNT Growth
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
- Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering
- Relaxation Behavior of Sputter Epitaxy Si_Ge_x Film on P-Type Si(001) and NDR Observation from Hole-Tunneling RTD at RT
- SiO_x/β-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of β-SiC
- Room Temperature Oscillation in Si/Si_Ge_x Resonant Tunneling Diode
- SiOx/3C-SiC/Si Metal--Insulator--Semiconductor Nonvolatile Resistance Memory
- Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers
- High-PVCR Si/Si_Ge_x Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer
- Analysis of Oxidation State of Multilayered Catalyst Thin Films for Carbon Nanotube Growth Using Plasma-Enhanced Chemical Vapor Deposition
- Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics
- Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
- Al2O3/3C-SiC/n-Si Nonvolatile Resistance Memory
- Hydrogen-Sensing Response of Carbon-Nanotube Thin-Film Sensor with Pd Comb-Like Electrodes
- Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
- Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers