Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
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概要
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Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si1-xGex buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample.
- 2011-02-25
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Hirose Nobumitsu
National Inst. Of Information And Communications Technology
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Hanafusa Hiroaki
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
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KASAMATSU Akifumi
National Inst. of Information and Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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Matsui Toshiaki
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Chong Harold
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Mimura Takashi
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Hirose Nobumitsu
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Kasamatsu Akifumi
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Hanafusa Hiroaki
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Suda Yoshiyuki
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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