Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K

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概要

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• We performed two-dimensional Monte Carlo (MC) simulations of 200-nm-gate InP-based In0.52Al0.48As/In0.75Ga0.25As pseudomorphic high electron mobility transistors (HEMTs) at 300 and 16 K to clarify the effect of temperature on electron transport. On decreasing the temperature, the calculated maximum transconductance $g_{\text{m}}$ increases from 1110 mS/mm at 300 K to 1400 mS/mm at 16 K. On the other hand, the calculated cutoff frequency $ f_{\text{T}}$ increases from 168 GHz at 300 K to 223 GHz at 16 K. The electron velocity overshoot under the gate is enhanced by reducing the temperature. The resulting average electron velocity under the gate increases from $3.60\times 10^{7}$ cm/s at 300 K to $5.26\times 10^{7}$ cm/s at 16 K. The average velocity of the electrons and electron occupancy in each valley were calculated to clarify the trend of the electron velocity with temperature. We found that the intervalley phonon scattering as well as the intravalley scattering plays a very important role in determining the average electron velocity at 300 K. The contribution of the intervalley scattering to the average electron velocity is almost of the same degree as that of the intravalley scattering at 300 K.

• 2010-11-25

著者

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Awano Yuji

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• WATANABE Issei

  National Institute of Info. & Com. Tech.

• SHINOHARA Keisuke

  National Institute of Info. & Com. Tech.

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Endoh Akira

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Awano Yuji

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Shinohara Keisuke

  National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Watanabe Issei

  National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Hikosaka Kohki

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Hiyamizu Satoshi

  Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

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