InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
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概要
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We report on the plasma-assisted molecular-beam epitaxy growth and device characteristics of InAlN/GaN heterostructure field-effect transistors (HFETs). The In mole fraction in InAlN was estimated to be 0.15 from the X-ray diffraction profile. The surface root-mean-square roughness of the InAlN layer was less than 3 nm. The room-temperature Hall mobility was 654 cm2/V$\cdot$s, and the sheet electron density was $1.7 \times 10^{13}$ cm-2. The InAlN/GaN HFET, which had a source-drain spacing of 3 μm and a gate length of 1.5 μm, showed a good pinch-off characteristic. The maximum source-drain current density and extrinsic transconductance were 500 mA/mm and 52 mS/mm, respectively.
- 2004-06-15
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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Matsui Toshiaki
National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan
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Higashiwaki Masataka
National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan
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