E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
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概要
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E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (ƒmax) of 550GHz and a current-gain cutoff frequency (ƒT) of 450GHz at room temperature, which is first experimental demonstration that ƒmax as high as 550GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3dB with an associated gain of 20.6dB at 79GHz.
- 2010-08-01
著者
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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WATANABE Issei
National Institute of Info. & Com. Tech.
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Watanabe Issei
National Institute Of Information And Communications Technology (nict)
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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MIMURA Takashi
National Institute of Information and Communications Technology
関連論文
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