Selective Dry Etching of AlGaAs-GaAs Heterojunction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1981-11-05

著者

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• Hikosaka K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• JOSHIN Kazukiyo

  Fujitsu Laboratories Ltd.

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

• Mimura T

  National Institute Of Information And Communications Technology

関連論文

• The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• 264 MHz HTS Lumped Element Bandpass Filter(Special Issue on Superconductive Devices and Systems)
• Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
• AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
• Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
• High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
• DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
• Millimeter Wave Antennas with Gaussian Radiation Patterns(Special Issue on Innovation in Antennas and Propagation for Expanding Radio Systems)
• Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
• 100-GHz Ultra-Broadband Distributed Amplifier in Chip-Size Package(Microwaves, Millimeter-Waves)
• Low-Power, High-Speed Integrated Logic with GaAs MOSFET : B-1: GaAs IC
• High Electron Mobility Transistor Logic
• 1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors
• CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
• CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
• CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
• InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• InGaP Channel FET with High Breakdown Voltage
• A Low Distortion pHEMT with Newly Developed Composite Channel Structure
• Highly-Reliable GaN HEMT Transmitter Amplifier with Output Power of Over 200W for Wireless Base Station
• Selective Dry Etching of AlGaAs-GaAs Heterojunction
• Enhancement-Mode High Electron Mobility Transistors for Logic Applications
• Hyperon Nonleptonic Decays Revisited
• 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
• The Mass Levels of Q^2 ^2 States in (3+1) Dimensional Lattice Gauge Theory
• Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
• Coherency Dependence of Projection Printing Method Using a Phase-Shifting Mask
• E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
• Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
• FDTD Analysis and Experiment of Fabry-Perot Cavities at 60GHz (Special Issue on Microwave and Millimeter Wave Technology)
• Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
• AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
• Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
• 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
• Dielectric Measurements in the 60-GHz Band Using a High-Q Gaussian Beam Open Resonator
• HEMT : Looking Back at Its Successful Commercialization(Heterostructure Microelectronics with TWHM2003)
• Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations
• High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
• InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Development of High Electron Mobility Transistor
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

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