Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-04-15

著者

• Harada N

  Department Of Electrical Engineering (nagaoka University Of Technology)

• Eshita T

  Fujitsu Lab. Ltd. Kanagawa Jpn

• TANAKA Hitoshi

  Fujitsu Laboratories Ltd.

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Harada Nobuhiro

  Department Of Electrical Engineering (nagaoka University Of Technology)

• MIYAGAKI Shinji

  Fujitsu Laboratories Ltd.

• HARA Naoki

  Fujitsu Laboratories Ltd.

• HARADA Naoki

  Fujitsu Laboratories Ltd.

• ESHITA Takashi

  Fujitsu Laboratories Ltd.

• HARADA Naoki

  Fujitsu Laboratories Limited

関連論文

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• Ultra High Density HfO2-Nanodot Memory for Flash Memory Scaling
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