93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
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概要
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In this study, we developed a new type of high-frequency amplifier topology using 75-nm-gate-length InP-based high-electron-mobility transistors (InP HEMTs). To enhance the gain for a wide frequency range, a common-source common-gate hybrid amplifier topology was proposed. A transformer-based balun placed at the input of the amplifier generates differential signals, which are fed to the gate and source terminals of the transistor. The amplified signal is outputted at the drain node. The simulation results show that the hybrid topology exhibits a higher gain from 90 to 140 GHz than that of the conventional common-source or common-gate amplifier. The two-stage amplifier fabricated using the topology exhibits a small signal gain of 12 dB and a 3-dB bandwidth of 40 GHz (93--133 GHz), which is the largest bandwidth and the second highest gain reported among those of published 120-GHz-band amplifiers. In addition, the measured noise figure was 5 dB from 90 to 100 GHz.
- 2013-04-25
著者
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Nakasha Yasuhiro
Fujitsu Limited
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Suzuki Toshihide
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Sato Masaru
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Shiba Shoichi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Matsumura Hiroshi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Takahashi Tsuyoshi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Nakasha Yasuhiro
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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