An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
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概要
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In this paper, we describe an eight-stage distributed amplifier (DA) developed using 0.1-μm-gate-length InP-based high electron mobility transistors (HEMTs) for millimeter-wave broadband systems. To obtain high power in a wide frequency range, a tapering technique in the drain line section and gain-boosting and bandwidth-expanding techniques in the lumped amplifier section were employed. The measured output saturated power ($P_{\text{sat}}$) was 15.5 dBm with a power added efficiency (PAE) of 13.9% at a frequency of 75 GHz, whereas the measured small signal gain and 3 dB bandwidth were 11 dB and 85 GHz, respectively. The $P_{\text{sat}}$ value is the highest reported in any DA.
- 2009-04-25
著者
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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MAKIYAMA Kozo
Fujitsu Laboratories Ltd.
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SATO Masaru
Fujitsu Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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OHKI Toshihiro
FUJITSU LABORATORIES LTD.
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Nakasha Yasuhiro
Fujitsu Limited
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Kawano Yoichi
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Toshihide
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Takahashi Tsuyoshi
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Makiyama Kozo
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Ohki Toshihiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Sato Masaru
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Hara Naoki
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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