Ohki Toshihiro | Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
スポンサーリンク
概要
関連著者
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OHKI Toshihiro
FUJITSU LABORATORIES LTD.
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Ohki Toshihiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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KIKKAWA Toshihide
Fujitsu Laboratories Ltd.
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MAKIYAMA Kozo
Fujitsu Laboratories Ltd.
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SATO Masaru
Fujitsu Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Nakasha Yasuhiro
Fujitsu Limited
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Kawano Yoichi
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Toshihide
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Takahashi Tsuyoshi
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Makiyama Kozo
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Sato Masaru
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Okamoto Naoya
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Ozaki Shiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Kanamura Masahito
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Kikkawa Toshihide
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Hara Naoki
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
著作論文
- An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
- Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors