HARA Naoki | Fujitsu Laboratories Ltd.

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著作論文

Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
InGaP Channel FET with High Breakdown Voltage
A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems
Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems(Heterostructure Microelectronics with TWHM2003)
Elmination of Kink Phenomena in InP-Based HEMTs by Forming Direct Ohmic Contacts in the Channel
Band Alignment of Molecular-Beam-Apiary-Grown GaS/GaAs Structure Using a Single [(t-Bu)GaS]_4 Precursor : Semiconductors
Effect of Adding CO_2 to CH_4/H_2 Mixture for InGaAs/GaAs Selective Reactive Ion Etching
Nonalloyed Ohmic Contacts for HEMTs Using n^+-InGaAs Layers Grown by MOVPE (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter
93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)

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