93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)
スポンサーリンク
概要
著者
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TAKAHASHI Tsuyoshi
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Nakasha Yasuhiro
Fujitsu Limited
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Suzuki Toshihide
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Sato Masaru
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Shiba Shoichi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Matsumura Hiroshi
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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Nakasha Yasuhiro
Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan
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- 93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
- 93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)