Band Alignment of Molecular-Beam-Apiary-Grown GaS/GaAs Structure Using a Single [(t-Bu)GaS]_4 Precursor : Semiconductors
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概要
- 論文の詳細を見る
We report on the band alignment of a molecular-beam-epitaxy (MBE)-grown GaS/GaAs structure using a single tertiarybutyl-gallium sulfide cubane [(t-Bu)GaS]_4 precursor. The optical band gap of epitaxial GaS film grown at a growth temperature (T_s) of 500℃ is estimated by spectroscopic ellipsometry to be 2.7 eV, whereas that of amorphous GaS film grown at a T_s of 350℃ is only 2.2 eV. X-ray photoemission spectroscopy (XPS) was used to estimate the band discontinuity between GaS and GaAs. Consequently, epitaxial and amorphous GaS/GaAs structures, respectively, reveal straggling type-I and staggered type-II band alignments.
- 社団法人応用物理学会の論文
- 2001-02-01
著者
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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TANAKA Hitoshi
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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