Effect of Adding CO_2 to CH_4/H_2 Mixture for InGaAs/GaAs Selective Reactive Ion Etching
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概要
- 論文の詳細を見る
InGaAs/GaAs selective reactive ion etching (RIE) by adding CO_2 to a conventional CH_4/H_2 mixture was developed for the first time. We demonstrated that adding CO_2 (7.8%) not only reduced polymer deposition during etching, but also achieved a significant increase in the In_<0.52>Ga_<0.48>As/GaAs selectivity from 2 to a maximum value of 6.5. We analized the etched surface with X-ray photoelectron spectroscopy (XPS) and found that the surface is polymer-rich after the CH_4/H_2 RIE, but it changes to Ga_2O_3-rich after our CH_4/H_2/CO_2 (7.8%) RIE. From this result, we proposed a mechanism of the InGaAs/GaAs selective RIE.
- 社団法人応用物理学会の論文
- 1995-12-30
著者
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SUEHIRO Haruyoshi
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Kuroda Shigeru
Fujitsu Laboratories Ltd.
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Nihei M
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Fujitsu Laboratories Ltd.
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Kuroda S
Fujitsu Laboratories Ltd.
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