CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
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概要
- 論文の詳細を見る
This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A 20-GHz pseudo-differential power amplifier (PA) with two-stage cascode configuration is designed with the impedance of 6.25Ω for input and 25Ω for output on the assumption of using an off-chip transformer for power combining. Each amplifier performs a saturation power of 20dBm with a linear gain of 18dB. The supply voltage is 2.4V, and the chip size is 2.0×1.8mm^2. A 77-GHz power amplifier with four-stage single configuration designed with the 50Ω impedance for input and output. The PA achieved a saturation power of 11.3dBm with a linear gain of 9.7dB.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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Suzuki T
Research Center Sony Corporation
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Sato M
Tokyo Inst. Technol. Tokyo
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SATO Masaru
Fujitsu Ltd.
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HIROSE Tatsuya
Fujitsu Ltd.
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Suzuki Tetsutaro
Departments Of Surgery Kitasato University School Of Medicine
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HARA Naoki
Fujitsu Laboratories Ltd.
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JOSHIN Kazukiyo
Fujitsu Laboratories Ltd.
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Joshin K
Fujitsu Ltd.
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Suzuki Toshihide
Fujitsu Ltd.
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Kawano Yoichi
Fujitsu Ltd.
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Nakasha Yasuhiro
Fujitsu Ltd.
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Suzuki T
Departments Of Surgery Kitasato University School Of Medicine
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Hirose Tatsuya
Compound Semiconductor Devices Lab Fujitsu Laboratories Ltd.
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Nakasha Y
Fujitsu Ltd.
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Suzuki Toshihide
Compound Semiconductor Devices Lab Fujitsu Laboratories Ltd.
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Hirose T
Fujitsu Ltd.
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Suzuki Takeshi
Laboratory Of Microbial Biochemistry Institute For Chemical Research Kyoto University
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Nakasha Yasuhiro
Fujitsu Limited
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Kawano Yoichi
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Toshihide
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
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Sato Masaru
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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