Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication

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In this paper, we present simple digital-based pulse generators (PGs) that emit short pulses with a full width at half-maximum (FWHM) of only several picoseconds in order to realize millimeter-wave impulse radio (IR) systems that can transmit signals at 10 Gbps and above. There are distinctive advantages of using digital techniques. Scaling devices and reducing parasitic capacitances can enhance performance, which is examined by a transition analysis of the PGs. Secondly, retiming techniques enable the PGs to suppress jitter, which is essential for maintaining transmission quality. Two types of PGs are demonstrated: Type-I PG with advanced 75 nm InP-based high electron mobility transistors (HEMTs) having a cavity structure generated short pulses with a record FWHM of ${<}4.9$ ps at 20 Gbps, realizing sub-THz IR systems. Type-II PG with mature 100 nm InP-based HEMTs without the cavity retimed 6.5 ps pulses, resulting in very small jitter of 256 fs. Type-II PG was used to construct an IR transmitter of over 10 Gbps at millimeter-wave frequencies (75–110 GHz).
2010-04-25