Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
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概要
- 論文の詳細を見る
We report the first monolithic integration of InGaAs/InAlAs resonant tunneling diode (RTD) and high electron mobility transistor (HEMT) epitaxially grown on an InP substrate. The transconductance for a 1-μm gate HEMT was 430 mS/mm and the peak-to-valley current ratio of the RTD was 5.1. Using the integrated structure, we demonstrate basic digital circuits to show low power characteristics of an RTD-load inverter and a static RAM cell circuit, consisting of a single transistor with two RTDs on the transistor. The memory cell circuit exhibits bistability, based on the RTD's negative differential resistance (NDR), at supply voltages from 0.6 to 1.1 V. The static power consumption was 7.3μW/gate for the inverter and 3.0μW for memory cell.
- 社団法人電子情報通信学会の論文
- 1995-04-25
著者
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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Imanishi Kenji
Fujitsu Laboratories Ltd.
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Nakasha Yasuhiro
Fujitsu Ltd.
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WATANABE Yuu
Fujitsu Laboratories Ltd.
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Watanabe Y
National Institute Of Advanced Research Association
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Nakasha Y
Fujitsu Ltd.
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Takikawa M
Fujitsu Laboratories Ltd.
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Watanabe Yoshinori
National Institute Of Advanced Industrial Science And Technology (aist)
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Nakasha Yasuhiro
Fujitsu Limited
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