Nakasha Yasuhiro | Fujitsu Limited

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概要

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著作論文

CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
InGaP Channel FET with High Breakdown Voltage
A Low Distortion pHEMT with Newly Developed Composite Channel Structure
Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems
Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems(Heterostructure Microelectronics with TWHM2003)
Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication
An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter
93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)

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