InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
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概要
- 論文の詳細を見る
We have developed InGaP-channel field effect transistors(FETs) with high breadkown voltages that can be fabricated by using conventional GaAs FET fabrication processes. The buffer and barrier layers were also optimized for the realization of high-voltage operation. The InGaP-channel FET has an extremely high on-state dreain-to-source breadkown voltage of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This eneabeled high-voltage large-signal operation at 40 V. The thirdorder intermodulation distortion of the InGaP channel FETs was 10-20 dB lower than that of a equivalent GaAs-channel FET, due to the high operating voltage.
- 社団法人電子情報通信学会の論文
- 2001-10-01
著者
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Tanaka H
Hitachi Ltd. Kokubunji‐shi Jpn
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KIKKAWA Toshihide
Fujitsu Laboratories Ltd.
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TANAKA Hitoshi
Fujitsu Laboratories Ltd.
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Taga Hidenori
Kddi R&d Laboratories Inc.
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JOSHIN Kazukiyo
Fujitsu Laboratories Ltd.
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Joshin K
Fujitsu Ltd.
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Nakasha Yasuhiro
Fujitsu Ltd.
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WATANABE Yuu
Fujitsu Laboratories Ltd.
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Watanabe Y
National Institute Of Advanced Research Association
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Nakasha Y
Fujitsu Ltd.
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Takikawa M
Fujitsu Laboratories Ltd.
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Watanabe Yoshinori
National Institute Of Advanced Industrial Science And Technology (aist)
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Nakasha Yasuhiro
Fujitsu Limited
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