Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling

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概要

• 論文の詳細を見る

• We have developed a simple technique for forming ultrahigh-density HfO2 nanodots with diameters of less than 3 nm and densities of $6 \times 10^{12}$ cm-2. The advantage of our method is that density and diameter are controllable. The memory cell in which ultrahigh-density nanodots are used as charge trap nodes shows 2 bits/cell operation without lateral migration of trapped charges. We propose that the ultrahigh-density HfO2 nanodots are suitable as charge storage nodes in future 45 and 32 nm generations.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-15

著者

• Yamaguchi Masaomi

  Fujitsu Lab. Ltd. Kanagawa Jpn

• TANAKA Hitoshi

  Fujitsu Laboratories Ltd.

• WAKAI Hironori

  FUJITSU LABORATOIRES Ltd.

• SUGIZAKI Taro

  FUJITSU LABORATOIRES Ltd.

• KUMISE Takaaki

  FUJITSU LABORATOIRES Ltd.

• KOBAYASHI Masahiro

  FUJITSU LABORATOIRES Ltd.

• NAKANISHI Toshiro

  FUJITSU LABORATOIRES Ltd.

• Wakai Hironori

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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