NAKANISHI Toshiro | FUJITSU LABORATOIRES Ltd.

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概要

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著作論文

Ultra High Density HfO2-Nanodot Memory for Flash Memory Scaling
High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs
Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications
Improvement in Retention/Program Time Ratio of Direct Tunneling Memory (DTM) for Low Power SoC Applications(Memory, Low-Power LSI and Low-Power IP)
Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning (Special Issue on Opto-Electronics and LSI)
Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N_2O-Nitrided O_3-Oxide
Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching
Ultraclean Technique for Silicon Wafer Surfaces with HNO_3-HF Systems : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
Instability of SiO_2 Film Caused by Fluorine and Chlorine Inclusion
Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications
Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation
Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories
Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling

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