Irino Kiyoshi | Fujitsu Ltd.
スポンサーリンク
概要
関連著者
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Irino Kiyoshi
Fujitsu Ltd.
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OHKUBO Satoshi
Fujitsu Laboratories Ltd.
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Ohkubo Shuichi
Ulsi Technology Laboratory Fujitsu Laboratories Ltd.
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Nakanishi Takuya
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Takasaki K
Ulsi Technology Laboratory Fujitsu Laboratories Ltd.
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田村 安孝
山形大学大学院理工学部
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Shigeno M
Ulsi Technology Laboratory Fujitsu Laboratories Ltd.
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NAKANISHI Toshiro
ULSI Research div., Fujitsu Laboratories Ltd.
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TAKASAKI Kanetake
ULSI Research div., Fujitsu Laboratories Ltd.
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Takasaki Kanetake
Ulsi Research Div. Fujitsu Laboratories Ltd.
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TAMURA Yasuyuki
ULSI Technology Laboratory, Fujitsu Laboratories Ltd.
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SHIGENO Mayumi
ULSI Technology Laboratory, Fujitsu Laboratories Ltd.
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IRINO Kiyoshi
ULSI Technology Laboratory, Fujitsu Laboratories Ltd.
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IRINO Kiyoshi
FUJITSU LIMITED
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SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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NAKANISHI Toshiro
FUJITSU LABORATOIRES Ltd.
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TAKASAKI Kanetake
Fujitsu Laboratories Ltd.
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Aoyama Takayuki
Fujitsu Labs. Ltd.
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Sugii Toshihiro
Fujitsu Ltd.
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Nakamura Tomoji
Fujitsu Ltd.
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Takasaki Kanetake
Fujitsu Laboratories Limited
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OHKUBO Satoshi
ULSI Technology Laboratory, Fujitsu Laboratories Ltd.
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OKUBO Satoshi
ULSI Technology Labs., Fujitsu Laboratories Ltd.
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TAMURA Yasuyuki
Fujitsu Laboratories Ltd.
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KATAOKA Yoshikazu
FUJITSU LIMITED
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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MORISAKI Yusuke
Fujitsu Ltd.
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Sugita Yoshihiro
Fujitsu Ltd.
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Morisaki Yusuke
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
著作論文
- Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
- Impact of Nitrogen Profile in Gate Oxynitride on Complementary Metal Oxide Semiconductor Characteristics
- Impact of Nitrogen Profile in Gate Oxynitride on CMOS Characteristics
- Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N_2O-Nitrided O_3-Oxide